RADIATION HARDENED POWER MOSFET
PD-96961B
IRHMS57Z60
RADIATION HARDENED
JANSR2N7478T1
POWER MOSFET
30V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA) R...
Description
PD-96961B
IRHMS57Z60
RADIATION HARDENED
JANSR2N7478T1
POWER MOSFET
30V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/697
Product Summary
5 TECHNOLOGY
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHMS57Z60 100K Rads (Si) 0.0055Ω 45A* JANSR2N7478T1
IRHMS53Z60 300K Rads (Si) 0.0055Ω 45A* JANSF2N7478T1
IRHMS54Z60 500K Rads (Si) 0.0055Ω 45A* JANSG2N7478T1 IRHMS58Z60 1000K Rads (Si) 0.0055Ω 45A* JANSH2N7478T1
Low-Ohmic TO-254AA
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n Low RDS(on)
n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight
n ESD Rating: Class 3B per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C
IDM PD @ TC = 25°C
Parameter Continuous Drain Current Continuous Drain Current Pul...
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