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JANSR2N7477T1

International Rectifier
Part Number JANSR2N7477T1
Manufacturer International Rectifier
Description RADIATION HARDENED POWER MOSFET
Published Jan 27, 2016
Detailed Description PD-95871 IRHMS57264SE RADIATION HARDENED JANSR2N7477T1 POWER MOSFET 250V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA)...
Datasheet PDF File JANSR2N7477T1 PDF File

JANSR2N7477T1
JANSR2N7477T1

Overview
PD-95871 IRHMS57264SE RADIATION HARDENED JANSR2N7477T1 POWER MOSFET 250V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Product Summary REF: MIL-PRF-19500/685 5 TECHNOLOGY ™ Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS57264SE 100K Rads (Si) 0.
061Ω 37A JANSR2N7477T1 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of ...


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