JANSR2N7471T1

PD-95889D IRHMS57160 RADIATION HARDENED JANSR2N7471T1 POWER MOSFET 100V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Product Summary REF: MIL-PRF-19500/698 5 TECHNOLOGY ™ Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS57160 100K Rads (Si) 0.013Ω 45A* JANSR2N7471T1 IRHMS53160 300K Rads (Si) 0.013Ω 45A* JANSF2N7471T1 IRHMS54160 500K Rads (Si) 0.013Ω 45A* JANSG2N7471T1 IRHMS58160 1000K Rads (Si) 0.014Ω 45A* JANSH2N7471T1 Low-Ohmic TO-254AA International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Absolute Maximum Ratings Features: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight n ESD Rating: Class 3B per MIL-STD-750, Method 1020 Pre-Irradiation ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Dr...