RADIATION HARDENED POWER MOSFET
PD-95838C
IRHMS57064
RADIATION HARDENED
JANSR2N7470T1
POWER MOSFET
60V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
P...
Description
PD-95838C
IRHMS57064
RADIATION HARDENED
JANSR2N7470T1
POWER MOSFET
60V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
REF: MIL-PRF-19500/698
5 TECHNOLOGY
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHMS57064 100K Rads (Si) 0.0066Ω 45A* JANSR2N7470T1
IRHMS53064 300K Rads (Si) 0.0066Ω 45A* JANSF2N7470T1
IRHMS54064 500K Rads (Si) 0.0066Ω 45A* JANSG2N7470T1 IRHMS58064 1000K Rads (Si) 0.0066Ω 45A* JANSH2N7470T1
Low-Ohmic TO-254AA
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n Low RDS(on)
n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C
IDM PD @ TC = 25°C
Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Der...
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