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1SS367

Part Number	1SS367
Manufacturer	Toshiba Semiconductor
Description	Silicon Diode
Published	Mar 23, 2005
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application 1SS367 Unit: mm z Small ...
Datasheet	1SS367 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application 1SS367 Unit: mm z Small package z Low forward voltage: VF = 0.
23V (typ.
) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P* 100 mA 1A 200 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage...

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