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1SS362

Toshiba Semiconductor
Part Number 1SS362
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Planar Type Diode
Published Mar 23, 2005
Detailed Description 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm  Small pa...
Datasheet PDF File 1SS362 PDF File

1SS362
1SS362

Overview
1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm  Small package  Low forward voltage : VF(3) = 0.
97 V (typ.
)  Fast reverse recovery time : trr = 1.
6 ns (typ.
)  Small total capacitance : CT = 0.
5 pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 240 * mA Average forward current IO 80 * mA Surge current (10ms) IFSM 1* A Power dissipation PD (Note 1, 3) 120 mW PD (Note 2) 100 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 SSM Tstg (Note 1) −55 to 150 ...


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