1SS361

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package  Low forward voltage : VF (3) = 0.90 V (typ.)  Fast reverse recovery time : trr = 1.6 ns (typ.)  Small total capacitance : CT = 0.9 pF (typ.) Note1: For detail information, please contact our sales. 1SS361 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation PD (Note 2, 4) 120 mW PD (Note 3) 100 Junction temperature Tj (Note 2) 150 °C Tj (Note 3) 125 Storage temperature Tstg (Note 2) −55 to 150 °C Tstg (Note 3) −55 to 125 SSM JEDEC ― JEITA ― TOSHIBA 1-2S1B Weight: 2.4mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). No...