BLF8G27LS-150V

BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 3 — 26 June 2013 Product data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2600 to 2700 1300 28 45 18 30 30[1] [1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. Channel bandwidth is 3.84 MHz. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low Rth providing excellent thermal stability  Decoupling leads to enable improved video bandwidth (60 MHz typical)  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent digital pre-distortion capability  Internally matched for ease of use  Integrated ESD protection  Design optimized for gull-wing  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2500 MHz to 2700 MHz frequency range NXP Semiconductors BLF8G27LS-150(G)V Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline BLF8G27LS-...