Document
BLF882; BLF882S
UHF power LDMOS transistor
Rev. 2 — 3 July 2015
Product data sheet
1. Product profile
1.1 General description
A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.
Table 1. Test information RF performance at Tcase = 25 C in a class-AB test circuit.
Test signal
f VDS PL(AV)
(MHz)
(V) (W)
Gp D (dB) (%)
RF performance in a class-AB 705 MHz narrowband test circuit
CW, class-AB
705
50 180
21 62
CW pulsed, class-AB
705
50 200
21 63
RF performance in a class-AB 470 MHz to 705 MHz broadband test circuit
DVB-T (8k OFDM)
470 to 705 50 33
20 28 to 31
PAR (dB)
-
8.0 to 8.4 [1]
[1] PAR of output signal at 0.01% probability on CCDF; PAR of input signal = 9.5 dB at 0.01% probability on CCDF.
1.2 Features and benefits
Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
Transmitter applications in the HF to 860 MHz frequency range Industrial applications in the HF to 860 MHz frequency range Broadcast transmitters
NXP Semiconductors
BLF882; BLF882S
UHF power LDMOS transistor
2. Pinning information
Table 2. Pinning Pin Description BLF882 (SOT502A) 1 drain 2 gate 3 source
BLF882S (SOT502B) 1 drain 2 gate 3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1]
V\P
[1]
V\P
Table 3. Ordering information
Type number
Package
Name Description
BLF882
- flanged ceramic package; 2 mounting holes; 2 leads
BLF882S
- earless flanged ceramic package; 2 leads
Version SOT502A SOT502B
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage VGS gate-source voltage Tstg storage temperature Tj junction temperature
Min 0.5 65 [1] -
Max 104 +13 +150 225
Unit V V C C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator.
5. Thermal characteristics
BLF882_BLF882S
Product data sheet
Table 5. Symbol Rth(j-c)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to case Tcase = 85 C; PL = 180 W
Typ [1] 0.56
Unit K/W
[1] Rth(j-c) is measured under RF conditions.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
2 of 12
NXP Semiconductors
BLF882; BLF882S
UHF power LDMOS transistor
6. Characteristics
Table 6. DC characteristics Tj = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.2 mA
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 120 mA
IDSS drain leakage current
VGS = 0 V; VDS = 50 V
IDSX drain cut-off current
VGS = VGS(th) + 3.75 V; VDS = 10 V
IGSS gate leakage current
VGS = 10 V; VDS = 0 V
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 4.25 A
Min Typ
[1] 104 -
[1] 1.4 1.9
--
[1] -
19
[1] -
240
[1] ID is the drain current
Max Unit -V 2.4 V 1.4 A -A
140 nA - m
Table 7. AC characteristics Tj = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
Ciss Coss Crs
input capacitance output capacitance feedback capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz
Min Typ - 105 - 34 - 0.7
Max Unit - pF - pF - pF
Table 8. RF characteristics Test signal: CW pulsed; RF characteristics in NXP production narrowband test circuit; Tj = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage
- 50 - V
IDq quiescent drain current
- 100 - mA
PL(AV) average output power f = 705 MHz; tp = 100 s; = 10 % 196 200 -
W
Gp power gain D drain efficiency
19.6 20.6 60 63 -
dB %
7. Test information
7.1 Ruggedness in class-AB operation
The BLF882 and BLF882S are capable of withstanding a load mismatch corresponding to VSWR 20 : 1 through all phases under the following conditions: VDS = 50 V; f = 705 MHz at rated PL(1dB).
BLF882_BLF882S
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
3 of 12
NXP Semiconductors 7.2 Test circuit
BLF882; BLF882S
UHF power LDMOS transistor
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BLF882_BLF882S
Product data sheet
DDD
Fig 1.
Printed-Circuit Board (PCB): Taconic RF-35; r = 3.5 F/m; thickness = 0.765 mm; thickness copper pla.