BLF647PS

BLF647PS Broadband power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Application information RF performance at Th = 25 C in a common source test circuit. Test signal f VDS IDq PL(AV) (MHz) (V) (A) (W) Pulsed, class-B 1300 32 0.1 - CW, class-B 1300 32 0.1 200 2-tone, class-AB f1 = 1299.95; f2 = 1300.05 32 0.7 75 PL(M) (W) 200 - Gp (dB) 17.5 17.5 19 D IMD3 (%) (dBc) 70 70 48 33 1.2 Features and benefits  Integrated ESD protection  Excellent ruggedness  High power gain  High efficiency  Excellent reliability  Easy power control  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Communication transmitter applications in the HF to 1500 MHz frequency range  Industrial applications in the HF to 1500 MHz frequency range NXP Semiconductors BLF647PS Broadband power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Connected to flange 3. Ordering information Simplified outline Graphic symbol      [1]    V\P Table 3. Ordering information Type number Package Name Description BLF...