BLF2425M9LS30

BLF2425M9L30; BLF2425M9LS30 Power LDMOS transistor Rev. 1 — 3 June 2015 Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) CW 2450 32 30 18.5 D (%) 61 1.2 Features and benefits  High efficiency  High power gain  Excellent ruggedness  Excellent thermal stability  Integrated ESD protection  Designed for broadband operation (2400 MHz to 2500 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications in the frequency range from 2400 MHz to 2500 MHz NXP Semiconductors BLF2425M9L30; BLF2425M9LS30 Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline BLF2425M9L30 (SOT1135A) 1 drain 2 gate  3 source [1] BLF2425M9LS30 (SOT1135B) 1 drain 2 gate 3 source [1]      [1] Connected to flange. 3. Ordering information Graphic symbol    V\P    V\P Table 3. Ordering information Type number Package Name Description BLF2425M9L30 - flanged ceram...