BLF178XRS

BLF178XR; BLF178XRS Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1. Application information Test signal CW pulsed RF f (MHz) 108 108 VDS PL (V) (W) 50 1200 50 1400 Gp (dB) 23 28 D (%) 80 72 1.2 Features and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:  Output power = 1400 W  Power gain = 28 dB  Efficiency = 72 %  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 128 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications NXP Semiconductors BLF178XR; BLF178XRS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF178XR (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF178XRS (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 12 1 5 34 [1] 3 4 5 2 sym117 12 5 34 [1] 1 3 5 4 2 sym117 Table 3. Ordering information Type number Package Name Description BLF178XR - flanged balanced LDMOST ceramic package...