BLF10M6135; BLF10M6LS135
Power LDMOS transistor
Rev. 1 — 24 June 2014
Product data sheet
1. Product profile
1.1 Gene...
BLF10M6135; BLF10M6LS135
Power LDMOS
transistor
Rev. 1 — 24 June 2014
Product data sheet
1. Product profile
1.1 General description
135 W LDMOS power
transistor for industrial applications at frequencies from 700 MHz to 1000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 26.5
21.0 28.0
ACPR (dBc) 39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
1.2 Features and benefits
Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency range
NXP Semiconductors
BLF10M6135; BLF10M6LS135
Power LDMOS
transistor
2. Pinning information
Table 2. Pinning Pin Description BLF10M6135 (SOT502A) 1 drain 2 gate 3 source
BLF10M6LS135 (SOT502B) 1 drain 2 gate 3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1 1 [1] 3
2 2
3
sym112
1 [1] 3
2
1
2 3
sym112
Table 3. Ordering information
Type number
Package
Name Description
BLF10M6135
- flanged ceramic package; 2 m...