2SC5200

2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t(s)Application c■ Audio power amplifier roduDescription PThis device is a NPN transistor manufactured teusing new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor Obsolete Product(s) - Obsoleshows good gain linearity behaviour. 1 23 TO-264 Figure 1. Internal schematic diagram Table 1. Device summary Order code 2SC5200 Marking 2SC5200 Package TO-264 Packaging Tube September 2009 Doc ID 16310 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/8 www.st.com 8 Electrical ratings 1 Electrical ratings 2SC5200 Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 230 V VCEO Collector-emitter voltage (IB = 0) 230 V VEBO Emitter-base voltage (IC = 0) 5V IC Collector current 15 A ICM t(s)PTOT cTSTG duTJ Collector peak current Total dissipation at TC = 25 °C Storage temperature Operating junction temperature te ProTable 3. Thermal data leSymbol Parameter Obsolete Product(s) - ObsoRthJC Thermal resistance junction-case max 30 150 -55 to 150 150 Value 0.83 A W °C °C Unit °C/W 2/8 Doc ID 16310 Rev 1 2SC5200 2 Electrical characteristics Electrical characteristics Tcase = 25 °C unless otherwise specified Table 4. Electrical characte...