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TND316S Dataheets PDF



Part Number TND316S
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Excellent Power Device
Datasheet TND316S DatasheetTND316S Datasheet (PDF)

Ordering number : ENA0422A TND316S Excellent Power Device Inverter and buffer driver for general purpose, Dual SOIC8 http://onsemi.com Features • Inverter buffer • Monolithic structure (High voltage CMOS process adopted) • Withstand voltage of 25V is assured • Wide range of operating voltage : 4.5V to 25V • Peak output current : 1A • Fast switching time (30ns typical at 1000pF load) • Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V) • Built-in input pull-down r.

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Ordering number : ENA0422A TND316S Excellent Power Device Inverter and buffer driver for general purpose, Dual SOIC8 http://onsemi.com Features • Inverter buffer • Monolithic structure (High voltage CMOS process adopted) • Withstand voltage of 25V is assured • Wide range of operating voltage : 4.5V to 25V • Peak output current : 1A • Fast switching time (30ns typical at 1000pF load) • Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V) • Built-in input pull-down resistance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Supply Voltage Input Voltage Allowable Power Dissipation Junction Temperature VDD VIN PD max Tj Storage Temperature Tstg Conditions Ratings 0 to 25 GND--0.3 to VDD+0.3 0.3 --55 to +150 --55 to +150 Unit V V W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7072-005 4.9 85 Product & Package Information • Package : SOIC8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 2,500 pcs./reel TND316S-TL-2H 0.22 Packing Type: TL Marking 6.0 1.375 3.9 0.375 0.715 1 1.27 0.175 1.55 4 0.445 0.254 (GAGE PLANE) 1 : NC 2 : IN A 3 : GND 4 : IN B 5 : OUT B 6 : VDD 7 : OUT A 8 : NC SOIC8 TL Block Diagram VDD TND 316 LOT No. INVERTING IN OUT NON-INVERTING GND Semiconductor Components Industries, LLC, 2013 August, 2013 92612 TKIM TC-00002817/D0606IP TIIM TB-00001536 No. A0422-1/8 TND316S Recommend Operating Conditions at Ta=25°C Parameter Symbol Operating Supply Voltage Operating Temperature VDD Topr Conditions Ratings 4.5 to 25 --40 to +125 Unit V °C Electrical Characteristics (AC Characteristics) at Ta=25°C, VDD=18V, VIN=5V Parameter Turn-On Rise Time Turn-Off Fall Time Delay Time Symbol tr tf tD1 tD2 CL=1000pF CL=1000pF CL=1000pF CL=1000pF Conditions min Ratings typ 30 30 30 45 max 45 45 45 60 Unit ns ns ns ns Electrical Characteristics (DC Characteristics) at Ta=25°C, VDD=4.5 to 25V Parameter Symbol Conditions Logic “1” Input Voltage Logic “0” Input Voltage Logic “1” Input Bias Current Logic “0” Input Bias Current High-level Output Voltage Low-level Output Voltage VDD Supply Current Output High Short Circuit Pulsed Current Output Low Short Circuit Pulsed Current Output On Resistance VIH VIL IIN+ IIN-VOH VOL Isupp IO+ IO-- ROUT VIN=VDD=25V VIN=0V or VDD IO=0A IO=0A VDD=10V, VIN=3V, (both inputs) VDD=10V, VIN=0V, (both inputs) VDD=18V, PW≤10μs, VOUT=0V VDD=18V, PW≤10μs, VOUT=18V VDD=18V, Iload=10mA, VOUT=“H” VDD=18V, Iload=10mA, VOUT=“L” min 2.6 --1 VDD--0.1 Ratings typ 40 1.0 1.0 1.0 8 6 max 0.8 100 1 0.1 4.5 0.2 12 10 Unit V V μA μA V V mA mA A A Ω Ω Switching Time Test Circuit VDD=18V INPUT A INPUT B 4.7μF TND316S 0.1μF OUTPUT A 1000pF OUTPUT B 10.


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