Document
Ordering number : ENA0422A
TND316S
Excellent Power Device
Inverter and buffer driver for general purpose, Dual SOIC8
http://onsemi.com
Features
• Inverter buffer
• Monolithic structure (High voltage CMOS process adopted)
• Withstand voltage of 25V is assured
• Wide range of operating voltage : 4.5V to 25V
• Peak output current : 1A
• Fast switching time (30ns typical at 1000pF load)
• Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V)
• Built-in input pull-down resistance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Supply Voltage Input Voltage Allowable Power Dissipation Junction Temperature
VDD VIN PD max Tj
Storage Temperature
Tstg
Conditions
Ratings 0 to 25
GND--0.3 to VDD+0.3 0.3
--55 to +150 --55 to +150
Unit V V W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7072-005
4.9 85
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
TND316S-TL-2H
0.22
Packing Type: TL
Marking
6.0 1.375
3.9
0.375 0.715
1 1.27
0.175 1.55
4 0.445 0.254 (GAGE PLANE)
1 : NC 2 : IN A 3 : GND 4 : IN B 5 : OUT B 6 : VDD 7 : OUT A 8 : NC
SOIC8
TL
Block Diagram
VDD
TND 316
LOT No.
INVERTING IN OUT
NON-INVERTING
GND
Semiconductor Components Industries, LLC, 2013 August, 2013
92612 TKIM TC-00002817/D0606IP TIIM TB-00001536 No. A0422-1/8
TND316S
Recommend Operating Conditions at Ta=25°C
Parameter
Symbol
Operating Supply Voltage Operating Temperature
VDD Topr
Conditions
Ratings 4.5 to 25
--40 to +125
Unit V °C
Electrical Characteristics (AC Characteristics) at Ta=25°C, VDD=18V, VIN=5V
Parameter
Turn-On Rise Time Turn-Off Fall Time
Delay Time
Symbol
tr tf tD1 tD2
CL=1000pF CL=1000pF CL=1000pF CL=1000pF
Conditions
min
Ratings typ 30 30 30 45
max 45 45 45 60
Unit
ns ns ns ns
Electrical Characteristics (DC Characteristics) at Ta=25°C, VDD=4.5 to 25V
Parameter
Symbol
Conditions
Logic “1” Input Voltage Logic “0” Input Voltage Logic “1” Input Bias Current Logic “0” Input Bias Current High-level Output Voltage Low-level Output Voltage
VDD Supply Current
Output High Short Circuit Pulsed Current Output Low Short Circuit Pulsed Current
Output On Resistance
VIH VIL IIN+ IIN-VOH VOL
Isupp
IO+ IO--
ROUT
VIN=VDD=25V VIN=0V or VDD IO=0A IO=0A VDD=10V, VIN=3V, (both inputs) VDD=10V, VIN=0V, (both inputs) VDD=18V, PW≤10μs, VOUT=0V VDD=18V, PW≤10μs, VOUT=18V VDD=18V, Iload=10mA, VOUT=“H” VDD=18V, Iload=10mA, VOUT=“L”
min 2.6
--1 VDD--0.1
Ratings typ
40
1.0 1.0 1.0
8 6
max
0.8 100
1
0.1 4.5 0.2
12 10
Unit
V V μA μA V V mA mA A A
Ω Ω
Switching Time Test Circuit
VDD=18V
INPUT A INPUT B
4.7μF
TND316S
0.1μF
OUTPUT A 1000pF OUTPUT B 10.