TND314S

Ordering number : ENA0420A TND314S Excellent Power Device Dual inverter driver for general purpose, Dual SOIC8 http://onsemi.com Features Dual inverter Monolithic structure (High voltage CMOS process adopted) Withstand voltage of 25V is assured Wide range of operating voltage : 4.5V to 25V Peak output current : 1A Fast switching time (25ns typical at 1000pF load) Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V) Built-in input pull-down resistance Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Supply Voltage Input Voltage Allowable Power Dissipation Junction Temperature VDD VIN PD max Tj Storage Temperature Tstg Conditions Ratings 0 to 25 GND--0.3 to VDD+0.3 0.3 --55 to +150 --55 to +150 Unit V V W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7072-005 4.9 85 Product & Package Information Package : SOIC8 JEITA, JEDEC : SC-87, SOT-96 Minimum Packing Quantity : 2,500 pcs./reel TND314S-TL-2H 0.22 Packing Type: TL Marking 6.0 1.375 3.9 0.375 0.715 1 1.27 0.175 1.55 4 0.445 0.254 (GAGE PLANE) 1 : NC 2 : IN A 3 : GND 4 : IN B 5 : OUT B 6 : VDD 7 : OUT A 8 : NC SOIC8 TL Block Dia...