SCH2809

SCH2809 Ordering number : ENA0446 SCH2809 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Features Applications Composite type with a P-channel sillicon MOSFET (SCH1305) and a Schottky barrier diode (SBS018) contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. [SBD] Short reverse recovery time. Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Marking : QJ Symbol VDSS VGSS ID IDP PD Tch Tstg VRRM VRSM IO IFSM Tj Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit 50Hz sine wave, 1 cycle Ratings Unit --12 ±10 --1.2 --4.8 A 0.6 150 --55 to +125 V V A W °C °C 15 15 0.5 3 --55 to +125 --55 to +125 V V A A °C °C © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Rev.0 I Pwagwew1.oofn6seImwiw.cwo.omnsemi.com Publication Order Number: SCH2809/D SCH2809 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff V...