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1SS348

Toshiba Semiconductor

Diode


Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching 1SS348 Unit: mm z Low forward voltage z Low reverse current z Small package : VF (3) = 0.56V (typ.) : IR = 5μA (max) : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage V...



Toshiba Semiconductor

1SS348

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