Diode
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS336
Ultra High Speed Switching Application
1SS336
Unit: mm
z Small pack...
Description
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS336
Ultra High Speed Switching Application
1SS336
Unit: mm
z Small package
: SC-59
z Low forward voltage
: VF (3) = 0.84V (typ.)
z Fast reverse recovery time : trr = 7ns (typ.)
z Small total capacitance : CT = 7pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation
IFM IO IFSM P
600 * 200 *
6* 150
mA mA A mW
Junction temperature Storage temperature
Tj 150 °C JEDEC Tstg −55~150 °C JEITA
TD-236MOD SC-59
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-3G1E
temperature/current/voltage and the significant change in
Weight: 0.012g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current Total capacitance Reverse recovery time
Symbol
VF (1) V...
Similar Datasheet