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1SS321

Toshiba Semiconductor

Diode


Description
www.DataSheet.co.kr 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching z Low forward voltage z Low reverse current z Small package : VF = 0.42V (typ.) : IR = 500nA (max) : SC-59 (SOT-23MOD) Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) for...



Toshiba Semiconductor

1SS321

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