1SS315

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications 1SS315 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range VRM IF Tj Tstg 5 30 125 −55~125 V mA °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Forward voltage Forward current Reverse current Total capacitance Symbol VF IF IR CT Test Condition IF = 2 mA VF = 0.5 V VR = 0.5 V VR = 0.2 V, f = 1 MHz Marking JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Min Typ. Max Unit ⎯ 0.25 ⎯ 30 ⎯ ⎯ ⎯ ⎯ 25 ⎯ 0.6 ⎯ V mA μA pF 1 2007-11-01 1SS315 2 2007-11-01 1SS315 RESTRICTIONS ON PRODUCT USE Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and...