1SS314

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS314 1SS314 VHF Tuner Band Switch Applications Small package. Small total capacitance: CT = 1.2 pF (max) Low series resistance: rs = 0.5 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 30 V IF 100 mA Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Forward voltage Reverse current Reverse voltage Total capacitance Series resistance Symbol VF IR VR CT rs Test Condition IF = 2 mA VR = 15 V IR = 1 μA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Min Typ. Max Unit ⎯ ⎯ 0.85 V ⎯ ⎯ 0.1 μA 30 ⎯ ⎯ V ⎯ 0.7 1.2 pF ⎯ 0.5 0.9 Ω Start of commercial production 1987-05 1 2014-03-01 1SS314 2 2014-03-01 1SS...