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1SS307

Toshiba Semiconductor

Diode


Description
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 1SS307 General Puropose Rectifier Applications  Low forward voltage  Low reverse current  Small total capacitance  Small package : VF = 1.0 V (typ.) : IR = 10 nA (max) : CT = 3.0 pF (typ.) : SC−59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) re...



Toshiba Semiconductor

1SS307

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