TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS294
Low Voltage High Speed Switching
z Low forward voltage z Low reverse surrent z Small package
: VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC−59
1SS294
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
45 V
Reverse voltage
V...