TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type
1SS293
Low Voltage High Speed Switching
Low forward voltage Low reverse surrent Small package
: VF (3) = 0.54V (typ.) : IR = 5µA (max)
1SS293
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Po...
