NTND31215CZ

NTND31215CZ Small Signal MOSFET 20 V, Complementary 0.65 mm x 0.90 mm x 0.4 mm XLLGA6 Package Features Advanced Trench Complementary MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 0.65 mm × 0.90 mm Package These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Small Signal Load Switch with Level Shift Analog Switch High Speed Interfacing Optimized for Power Management in Ultra Portable Products MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage NMOS VDSS 20 V PMOS −20 Gate-to-Source Voltage NMOS VGSS ±8 V PMOS ±8 N−Channel Continuous Drain Current (Note 1) P−Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t≤5s Steady State t≤5s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C ID ID PD 220 158 253 −127 −91 −146 125 mA mA mW t≤5s 166 Pulsed Drain Current NMOS PMOS tp = 10 ms IDM 846 −488 mA Source Current (Body Diode) IS 200 mA −200 Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TJ, TSTG TL −55 to 150 260 °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. www....