Power MOSFET
NTMFS6B03N
Power MOSFET
100 V, 4.8 mW, 132 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design •...
Description
NTMFS6B03N
Power MOSFET
100 V, 4.8 mW, 132 A, Single N−Channel
Features
Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1, 2, 3)
Power Dissipation RqJC (Notes 1, 2)
Steady State
TC = 25°C TC = 100°C TC = 25°C TC = 100°C
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1 & 2)
Steady State
TA = 25°C TA = 100°C TA = 25°C TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
PD
ID
PD
IDM TJ, Tstg
100 ±20 132
83
165 65 19
12
3.4 1.4 470 −55 to + 150
V V A
W
A
W
A °C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 60 A)
IS 160 A EAS 180 mJ
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
0.76 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
38
1. The entire application en...
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