NSM3005NZ

Small Signal BJT and MOSFET 30 V, 500 mA, PNP BJT with 20 V, 224 mA, N−Channel MOSFET NSM3005NZ Features These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Portable Devices Q1 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current VCEO VCBO VEBO IC IB 30 V 40 V 5.0 V 500 mA 50 mA Q2 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Pulsed Drain Current Source Current (Body Diode) TA = 25°C TA = 85°C TA = 25°C Tp = 10 ms VDSS VGS ID IDM IS 20 V ±8 V 224 mA 162 241 673 mA 120 mA THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Operating Junction and Storage Temperature RqJA PD TJ, TSTG 245 0.8 −55 to 150 °C/W W °C Lead Temperature for Soldering Purposes TL 260 °C (1/8″ from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu. area = 1.127 in sq [1 oz] including traces). DATA SHEET www.onsemi.com MARKING DIAGRAM...