Switching Diodes
Switching Diodes Silicon Epitaxial Planar
1SS226
1. Applications
• Ultra-High-Speed Switching
2. Features
(1) AEC-Q101 q...
Description
Switching Diodes Silicon Epitaxial Planar
1SS226
1. Applications
Ultra-High-Speed Switching
2. Features
(1) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact our sales.
3. Packaging and Internal Circuit
S-Mini
1SS226
1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2
©2017-2022
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
1982-09
2022-11-22 Rev.7.0
1SS226
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
VRM
85
V
Reverse voltage
VR
80
Peak forward current Average rectified current
IFM
(Note 1)
IO
(Note 1)
300
mA
100
Power dissipation
PD (Note 2), (Note 3)
200
mW
(Note 4)
150
Non-repetitive peak forward surge current
IFSM (Note 1), (Note 5)
2
A
Junction temperature
Tj
(Note 3)
150
�
(Note 4)
125
Storage temperature
Tstg
(Note 3)
-55 to 150
�
(Note 4)
-55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability da...
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