Silicon Controlled Rectifiers
MCR264−4, MCR264−6, MCR264−8
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for bac...
Description
MCR264−4, MCR264−6, MCR264−8
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for back-to-back SCR output devices for solid state relays or applications requiring high surge operation.
Photo Glass Passivated Blocking Junctions for High Temperature
Stability, Center Gate for Uniform Parameters
400 Amperes Surge Capability Blocking Voltage to 600 Volts Device Marking: Logo, Device Type, e.g., MCR264−4, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Peak Repetitive Off−State Voltage(1) (TJ = *40 to 125°C, Sine Wave 50 to 60 Hz; Gate Open) MCR264−4 MCR264−6 MCR264−8
VDRM, VRRM
200 400 600
Unit Volts
On-State RMS Current (TC = 80°C; 180° Conduction Angles)
Average On-State Current (TC = 80°C; 180° Conduction Angles)
Peak Non-repetitive Surge Current (TC = 80°C) (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
Forward Peak Gate Power (Pulse Width ≤ 1.0 μs, TC = 80°C)
Forward Average Gate Power (t = 8.3 ms, TC = 80°C)
Forward Peak Gate Current (Pulse Width ≤ 1.0 μs, TC = 80°C)
Operating Junction Temperature Range
IT(RMS) IT(AV) ITSM
PGM PG(AV)
IGM TJ
40 A
25 A
A 400
450 20 Watts
0.5 Watt
2.0 A
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall...
Similar Datasheet