1SS199
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-299A (Z) Rev. 1 Features
• Det...
1SS199
Silicon
Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-299A (Z) Rev. 1 Features
Detection efficiency is very good. Small temperature coefficient. Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No. 1SS199 Cathode band Green Mark 3 Package Code MHD
Outline
3
1 Cathode band
2
1. Cathode 2. Anode
1SS199
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 30 15 125 –55 to +125 Unit V mA °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Symbol IF IR C η — Min 3.0 — — 70 70 Typ — — — — — Max — 100 3.0 — — Unit mA µA pF % V Test Condition VF = 1V VR = 10V VR = 1V, f = 1MHz Vin = 2Vrms, f = 40MHz, RL = 5k Ω, CL = 20pF *C = 200pF, Both forward and reverse direction 1 pulse.
Note: Failure criterion; I R ≥ 200µA at VR = 10V
1SS199
10
–1
10 Forward current I F (A)
–2
10
–3
10
–4
10
–5
0
0.8 1.2 1.6 0.4 Forward voltage VF (V)
2.0
Fig.1 Forward current Vs. Forward voltage
–2
10
Reverse current I R (A)
10
–3
10
–4
10
–5
10
–6
0
5
10 15 25 20 Reverse voltage VR (V)
30
Fig.2 Reverse current Vs. Reverse voltage
1SS199
f = 1MHz
10 Capacitance C (pF)
1.0
10
–1
10–1
1.0 Reverse voltage VR (V)
10
Fig.3 Capacitance Vs. Reverse voltage
100
80 Rectifier efficiency η (%)
60
40
20
0 0 0.5...
