DatasheetsPDF.com

MGBR10L80C

UTC

DUAL MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR10L80C Preliminary DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10L...


UTC

MGBR10L80C

File Download Download MGBR10L80C Datasheet


Description
UNISONIC TECHNOLOGIES CO., LTD MGBR10L80C Preliminary DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10L80C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.  FEATURES * Low forward voltage drop * High switching speed  SYMBOL DIODE  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR10L80CL-TA3-T MGBR10L80CG-TA3-T MGBR10L80CL-TF3-T MGBR10L80CG-TF3-T Note: Pin Assignment: A: Anode K: Cathode Package TO-220 TO-220F Pin Assignment 123 AKA AKA Packing Tube Tube  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R204-055.b MGBR10L80C Preliminary DIODE  ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 80 V Working Peak Reverse Voltage Repetitive Peak Reverse Voltage VRWM VRRM 80 80 V V Average Rectified Output Current Per Device Per Leg Total IO 5A 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 80 A Operating Junction Temperature TJ -65~+150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress rating...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)