DUAL MOS GATED BARRIER RECTIFIER
UNISONIC TECHNOLOGIES CO., LTD
MGBR10L200C
Preliminary
DUAL MOS GATED BARRIER RECTIFIER
DESCRIPTION
The UTC MGBR10...
Description
UNISONIC TECHNOLOGIES CO., LTD
MGBR10L200C
Preliminary
DUAL MOS GATED BARRIER RECTIFIER
DESCRIPTION
The UTC MGBR10L200C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.
FEATURES
* Low forward voltage drop * High switching speed
SYMBOL
DIODE
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MGBR10L200CL-TA3-T
MGBR10L200CG-TA3-T
Note: Pin Assignment: A: Anode K: Cathode
Package TO-220
Pin Assignment 123 AKA
Packing Tube
MARKING
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R204-053.b
MGBR10L200C
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
VRM 200 V
Working Peak Reverse Voltage Peak Repetitive Reverse Voltage
VRWM VRRM
200 200
V V
Average Rectified Output Current Per Device
Per Leg Total
IO
5A 10 A
Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load
IFSM
110
A
Operating Junction Temperature
TJ
-65~+150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not ...
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