IPB120N04S4L-02

Data Sheet IPB120N04S4L-02 OptiMOSTM-T2 Power-Transistor Features N-channel Logic Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Product Summary VDS RDS(on),max ID 40 V 1.7 mΩ 120 A PG-TO263-3-2 Type IPB120N04S4L-02 Package PG-TO263-3- Marking 4N04L02 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=60A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 120 120 480 480 120 +20/-16 158 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.0 page 1 2013-06-03 Data Sheet IPB120N04S4L-02 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC - min. Values typ. Unit max. - - 0.95 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 40 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=110µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=40V, V GS=0V - 0.05 1 µA V DS=18V, V GS=0V, T j=85°C2) - 1 20 Gate-source leakage current I GSS V G...