Silicon Carbide Schottky Diode
IDW20G120C5B
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
Final Datasheet
Rev. 2.1 2...
Silicon Carbide
Schottky Diode
IDW20G120C5B
5th Generation CoolSiC™ 1200 V SiC
Schottky Diode
Final Datasheet
Rev. 2.1 2017-07-21
Industrial Power Control
IDW20G120C5B
5th Generation CoolSiC™ 1200 V SiC
Schottky Diode
CoolSiCTM SiC
Schottky Diode
Features:
Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant
1
2
CASE
3
Benefits
System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability RelatedLinks: www.infineon.com/sic
Applications
Solar inverters Uninterruptable power supplies Motor drives Power Factor Correction
Package pin definitions
Pin 1 – anode 1 Pin 2 and backside – cathode Pin 3 – anode 2
Key Performance and Package Parameters (leg/device)
Type IDW20G120C5B
VDC 1200V
IF 10A / 20A
QC 53nC / 106nC
Tj,max Marking 175°C D2012B5
Package PG-TO247-3
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. ...