BSN011NE2LS

OptiMOSTM Power-MOSFET Features Optimized for high performance Buck converter Very low parasitic inductance Low profile (<0.5 mm) Double side cooling N-channel 100% avalanche tested Very low on-resistance R DS(on) @ V GS=4.5 V Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to JEDEC1) for target applications Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) BSN011NE2LS 25 V 1.1 mW 50 A 32 nC 54 nC LG-USON-6-1 Type BSN011NE2LS Package LG-USON-6-1 Marking 011NE2L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C I D,pulse I AS E AS V GS V GS=10 V, T A=25 °C, R thJA=50 K/W2) T C=25 °C T C=25 °C I D=50 A, R GS=25 W Rev. 2.0 page 1 Value 50 50 50 50 33 200 50 145 ±20 Unit A mJ V 2014-05-23 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C T A=25 °C, R thJA=50 K/W2) Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 BSN011NE2LS Value 78 2.5 -55 ... 150 55/150/56 Unit W °C Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC Device on...