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PXAC182002FC

Infineon

Thermally-Enhanced High Power RF LDMOS FET


Description
PXAC182002FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PXAC182002FC is a 180-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and the...



Infineon

PXAC182002FC

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