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PTFB091802FC

Part Number	PTFB091802FC
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Jan 26, 2016
Detailed Description	PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 – 960 MHz Description The PTFB091802FC LDMOS ...
Datasheet	PTFB091802FC PDF File

Overview

PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 – 960 MHz Description The PTFB091802FC LDMOS FET is designed for use in power amplifier applications in the 920 MHz to 960 MHz frequency band.
Features include high gain and a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFB091802FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1400 mA, ƒ = 960 MHz 3GPP WCDMA signal, PAR = 10.
0 dB, 3.
84 MHz BW 24 Gain 20 60 40 16 Efficiency 12 20 0 8 PAR @ 0.
01% CCDF 4 -20 -40 0 ...

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PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET - Infineon

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