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PJU14P06A

Pan Jit International

60V P-Channel Enhancement Mode MOSFET

PPJU14P06A / PJD14P06A 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -14 A Features  RDS(ON), VGS@-...


Pan Jit International

PJU14P06A

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PPJU14P06A / PJD14P06A 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -14 A Features  RDS(ON), VGS@-10V,ID@-6A<110mΩ  RDS(ON), VGS@-4.5V,ID@-3A<130mΩ  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data TO-252 TO-251AB  Case : TO-251AB, TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams  TO-252 Approx. Weight : 0.0104 ounces, 0.297grams Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25oC TC=100oC Pulsed Drain Current (Note 1) TC=25oC Power Dissipation TC=25oC TC=100oC Continuous Drain Current TA=25oC TA=70oC Power Dissipation TA=25oC Power Dissipation TA=70oC Single Pulse Avalanche Energy (Note 6) Operating Junction and Storage Temperature Range Typical Thermal resistance(Note 4,5) Junction to Case Junction to Ambient  Limited only By Maximum Junction Temperature SYMBOL VDS VGS ID IDM PD ID PD EAS TJ,TSTG RθJC RθJA LIMIT -60 +20 -14 -9 -42 40 16 -3.2 -2.5 2.0 1.3 20 -55~150 3.1 62.5 UNITS V V A W A A W mJ oC oC/W July 9,2015-REV.00 Page 1 PPJU14P06A / PJD14P06A Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Dra...




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