1SS120

1SS120 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-167B (Z) Rev. 2 Aug. 1995 Features Low capacitance. (C = 3.0pF max) Short reverse recovery time. (trr = 3.5ns max) Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS120 Cathode band Light Blue Mark 1 Package Code MHD Outline 1 1 Cathode band 2 1. Cathode 2. Anode 1SS120 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR I FM I FSM * IO Pd Tj Tstg Value 70 60 450 1 150 250 175 –65 to +175 Unit V V mA A mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C t rr* Min — — — — Typ — — — — Max 0.8 0.1 3.0 3.5 Unit V µA pF ns Test Condition I F = 10mA VR = 60V VR = 1V, f = 1MHz I F = 10mA, VR = 6V, RL = 50Ω Note: Reverse recovery time test circuit DC Supply 0.1µF 3kΩ Sampling Rin = 50Ω Oscilloscope Ro = 50Ω Pulse Generator Trigger 2 1SS120 10 –1 Forward current I F (A) 10 –3 10 –4 0 0.2 0.8 0.4 0.6 1.0 Forward voltage VF (V) Ta = 125 °C Ta = 75°C Ta = 25°C Ta = –25° C 10 –2 1.2 Fig.1 Forward current Vs. Forward voltage –4 10 Ta = 125°C 10 Reverse current I R (A) –5 Ta = 75°C 10 –6 10 –7 Ta = 25°C 10 –8 10 –9 0 60 ...