PJQ5463A

PPJQ5463A 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -15 A DFN5060-8L Features  RDS(ON), VGS@-10V,[email protected]<68mΩ  RDS(ON), [email protected],[email protected]<85mΩ  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: DFN5060-8L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0028 ounces, 0.08 grams  Marking: Q5463A Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25oC TC=100oC Pulsed Drain Current (Note 1) TC=25oC Power Dissipation TC=25oC TC=100oC Continuous Drain Current TA=25oC TA=70oC Power Dissipation TA=25oC Power Dissipation TA=70oC Single Pulse Avalanche Energy (Note 6) Operating Junction and Storage Temperature Range Typical Thermal Resistance (Note 4,5) Junction to Case Junction to Ambient  Limited only By Maximum Junction Temperature SYMBOL VDS VGS ID IDM PD ID PD EAS TJ,TSTG RθJC RθJA LIMIT -60 +20 -15 -9.5 -60 25 10 -4.0 -3.2 2.0 1.3 31 -55~150 5.0 62.5 UNITS V V A W A A W mJ oC oC/W July 21,2015-REV.00 Page 1 PPJQ5463A Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resist...