SL1002

TECHNICAL DATA Audio Frequency Power Amplifier Features ● Low Speed Switching SOT-223 SL1002 Emitter Collector Base 123 SL1002 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Tc=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP *Collector Current (Pulse) IB Base Current (DC) PC Rθja Collector Dissipation Junction to Ambient (TC=25°C) Rθjc Junction to Case TJ Junction Temperature TSTG Storage Temperature * PW≤10ms, Duty Cycle≤50% Value 40 30 5 3 7 0.6 10 132 13.5 150 - 55 ~ 150 Units V V V A A A W °C/W °C/W °C °C Electrical Characteristics Tc=25°C unless otherwise noted Characteristics DC Current Gain (1), (2) DC Current Gain (1), (2) Symbol hFE hFE Unit Measurement Mode Vce =2V, Ic =20mA Vce = 2V, Ic = 1A Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Emitter Cut-off Current Icbo μA Vcb = 30V, Ie = 0 Icbo μA Vcb = 40V, Ie = 0 Iebo μA Veb = 3V, Ic = 0 Iebo μA Veb = 5V, Ic = 0 Collector-Emitter Saturation Voltage (1) Vce (sat) Ic = 2A, Ib = 0.2A V Ic = 0.8 A, Ib = 0.02 A Base-Emitter Saturation Voltage (1) Vbe (sat) V Ic = 2A, Ib = 0.2A (1) Pulse Test : Pulse Width ≤ 300㎲. Duty Cycle ≤ 2% (2) Measurement mode for a network with common base : Vcb = 1V, Ie=Ic Min Max 30 60 400 1.0 100 1.0 100 0.5 0.1 2.0 * Stresses beyond those listed under “absolute maximum ratings” may cause permanent da...