UNISONIC TECHNOLOGIES CO., LTD
MJE13009-K
NPN SILICON TRANSISTOR
SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
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UNISONIC TECHNOLOGIES CO., LTD
MJE13009-K
NPN SILICON
TRANSISTOR
SWITCHMODE SERIES
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching
Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.
FEATURES
* VCEO 400V and 300 V * Reverse Bias SOA with Inductive Loads @ TC = 100°C * Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C
tC @ 8 A, 100°C is 120 ns (Typ.) * 700 V Blocking Capability * SOA and Switching Applications Information
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13009L-K-TA3-T MJE13009G-K-TA3-T
MJE13009L-K-T3P-T MJE13009G-K-T3P-T
Note: Pin Assignment: E: Emitter
C: Collector
Package
TO-220 TO-3P B: Base
Pin Assignment 123 BCE BCE
Packing
Tube Tube
MARKING
www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd
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QW-R223-007.B
MJE13009-K
NPN SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO 400 V
Collector-Emitter Voltage (VBE=-1.5V)
VCEV
700
V
Emitter Base Voltage
VEBO 9 V
Collector Current
Continuous Peak (Note 3)
IC ICM
12 24
A
Base Current
Continuous Peak (Note 3)
IB IBM
6 12
A
Emitter Current
Continuous Peak (Note 3)
IE IEM
18 36
A
Power Dissipation Derate above 25°C
TO-220...