Document
UNISONIC TECHNOLOGIES CO., LTD
MJE13002-E
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
DESCRIPTION
The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits.
FEATURES
*Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. *Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A *Switch Time- tf =0.7μs(Max.) @Ic=1.0A.
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
MJE13002L-E-x-T6S-K
MJE13002G-E-x-T6S-K
TO-126S
MJE13002L-E-x-T92-B
MJE13002G-E-x-T92-B
TO-92
MJE13002L-E-x-T92-K
MJE13002G-E-x-T92-K
TO-92
Note: Pin Assignment: C: Collector
B: Base E: Emitter
Pin Assignment 123 BCE BCE BCE
Packing
Bulk Tape Box
Bulk
MARKING
TO-126S
TO-92
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 8
Ver.A
MJE13002-E
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Continuous Peak (1)
Base Current
Continuous Peak (1)
Emitter Current
Continuous Peak (1)
TA=25°C
TO-92 TO-126S
Derate
TO-92
Total Power Dissipation
above 25°C TO-126S
TC=25°C
TO-92 TO-126S
Derate
TO-92
above 25°C TO-126S
Junction Temperature
Storage Temperature
SYMBOL VCEO(SUS)
VCEV VEBO
IC ICM IB IBM IE IEM PD
TJ TSTG
RATINGS 300 600 9 1.5 3 0.75 1.5 2.25 4.5 1.0 1.4 8 11.2 5 40 40 320 150
-65 to +150
UNIT V V V A
A
A
Watts MW/°C
Watts MW/°C
°C °C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
TO-92 TO-126S
θJC
25 3.12
°C/W
Junction to Ambient
TO-92 TO-126S
θJA
122 89
°C/W
Maximum Load Temperature for Soldering Purposes: 1/8” from Case for 5 Seconds
TL
275 °C
Note: 1. Pulse Test : Pulse Width=5ms,Duty Cycle≤10%
2. Designer 's Data for “Worst Case” Conditions – The Designer 's Data Sheet permits the design of most
circuits entirely from the information presented. SOA Limit curves – representing boundaries on device
characteristics – are given to facilitate “Worst case” design.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
Ver.A
MJE13002-E
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage Collector Cutoff Current
SECOND BREAKDOWN DC Current Gain
Collector-Emitter Saturation Voltage
SYMBOL VCEO(SUS)
ICEV
hFE1 hFE2 hFE3 VCE(SAT)
Base-Emitter Saturation Voltage
V BE(SAT)
DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product Output Capacitance
fT Cob
SWITCHING CHARACTERISTICS (TABLE 1) Delay Time Rise Time Storage Time Fall Time
td tr ts tf
INDUCTIVE LOAD, CLAMPED (TABLE 1, FIGURE 7)
Storage Time
tsv
Crossover Time
tc
Fall Time
tfi
TEST CONDITIONS
IC=10 mA , IB=0 VCEV=Rated Value, VBE(off)=1.5 V VCEV=Rated Value, VBE(off)=1.5V,Tc=100°C
IC=0.5 A, VCE=2 V IC=1 A, VCE=2 V IC=200mA, VCE=10V IC=0.5A, IB=0.1A IC=1A, IB=0.2A IC=1.5A, IB=0.5A IC=0.5A, IB=0.1A IC=1A, IB=0.25 A
IC=100mA, VCE=10 V, f=1MHz VCB=10V, IE=0, f=0.1MHz
VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25μs, Duty Cycle≤1%
IC=1A,Vclamp=300V, IB1=0.2A,VBE(off)=5V,TC=100°C
MIN TYP MAX UNIT
300 1 5
8 40
5 25
9 40
0.8
1.8 V
3
1 1.2
V
4 10 21
MHz pF
0.05 0.1 0.5 1 24 0.4 0.7
μs μs μs μs
1.7 4 0.29 0.75 0.15
μs μs μs
CLASSIFICATION OF hFE1
RANK RANGE
A 8 ~ 16
B 15 ~ 21
C 20 ~ 26
D 25 ~ 31
E 30 ~ 36
F 35 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
Ver.A
MJE13002-E
NPN EPITAXIAL SILICON TRANSISTOR
APPLICATION INFORMATION
Test Circuits
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
+5V VCC
0.001µF
1N4933 33 MJE210
L MR826*
pw 5V
DUTY CYCLE? 10% tr,tf? 10ns
68
33 1N4933
2N2222 1K
1K +5V
RB IB
1N4933
0.02µF 270
NOTE PWand Vcc Adjusted for Desired Ic RB Adjusted for Desired IB1
1K T.U.T. 2N2905 MJE200 47 1/2W 100
-VBE(off)
IC Vclamp
*SELECTEDFOR? 1KV 5.1K
VCE 51
Coil Data :
GAP for 30 mH/2 A
VCC=20V Ferroxcube core #6656
Lcoil=50mH
Vclamp=300V
Full Bobbin ( ~ 200 Turns) #20
Output Waveforms
OUTPUT WAVEFORMS
IC IC(pk)
t1 VCE VCE or
Vclamp TIME
tf CLAMPED t
tf
t2 t
t1 Adjusted to Obtain Ic
t1=
Lcoil(Icpk) Vcc
t2=
Lcoil(Icpk) Vclamp
Test Equipment Scope-Tektronics 475 or Equivalent
Circuit Values
Test Waveforms
Resistive Switching
+125V
Rc
RB TUT
SCOPE
D1 -4.0V
VCC=125V RC=125Ω D1=1N5820 or
Equiv. RB=47Ω
+10.3V
25μS
0
-8.5V tr,tf<10ns Duty Cycly=1.0% RB and Rc adjusted for desired IB and Ic
IC (AMP)
0.5
1
TC (°C)
25 100
25 100
TSV (μs)
1.3 1.6
1.5 1.7
Table 2. Typical Inductive Switching Performance
TRV (μs)
0.23 0.26
0.10 0.13
TFI (μs)
0.30 0.30
0.14 0.26
TTI (μs)
0.35 0.40
0.05.