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MJE13002-E Dataheets PDF



Part Number MJE13002-E
Manufacturers UTC
Logo UTC
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Datasheet MJE13002-E DatasheetMJE13002-E Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits.  FEATURES *Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. .

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UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits.  FEATURES *Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. *Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A *Switch Time- tf =0.7μs(Max.) @Ic=1.0A.  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MJE13002L-E-x-T6S-K MJE13002G-E-x-T6S-K TO-126S MJE13002L-E-x-T92-B MJE13002G-E-x-T92-B TO-92 MJE13002L-E-x-T92-K MJE13002G-E-x-T92-K TO-92 Note: Pin Assignment: C: Collector B: Base E: Emitter Pin Assignment 123 BCE BCE BCE Packing Bulk Tape Box Bulk  MARKING TO-126S TO-92 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 8 Ver.A MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak (1) Base Current Continuous Peak (1) Emitter Current Continuous Peak (1) TA=25°C TO-92 TO-126S Derate TO-92 Total Power Dissipation above 25°C TO-126S TC=25°C TO-92 TO-126S Derate TO-92 above 25°C TO-126S Junction Temperature Storage Temperature SYMBOL VCEO(SUS) VCEV VEBO IC ICM IB IBM IE IEM PD TJ TSTG RATINGS 300 600 9 1.5 3 0.75 1.5 2.25 4.5 1.0 1.4 8 11.2 5 40 40 320 150 -65 to +150 UNIT V V V A A A Watts MW/°C Watts MW/°C °C °C  THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Case TO-92 TO-126S θJC 25 3.12 °C/W Junction to Ambient TO-92 TO-126S θJA 122 89 °C/W Maximum Load Temperature for Soldering Purposes: 1/8” from Case for 5 Seconds TL 275 °C Note: 1. Pulse Test : Pulse Width=5ms,Duty Cycle≤10% 2. Designer 's Data for “Worst Case” Conditions – The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves – representing boundaries on device characteristics – are given to facilitate “Worst case” design. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 Ver.A MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR  ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage Collector Cutoff Current SECOND BREAKDOWN DC Current Gain Collector-Emitter Saturation Voltage SYMBOL VCEO(SUS) ICEV hFE1 hFE2 hFE3 VCE(SAT) Base-Emitter Saturation Voltage V BE(SAT) DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product Output Capacitance fT Cob SWITCHING CHARACTERISTICS (TABLE 1) Delay Time Rise Time Storage Time Fall Time td tr ts tf INDUCTIVE LOAD, CLAMPED (TABLE 1, FIGURE 7) Storage Time tsv Crossover Time tc Fall Time tfi TEST CONDITIONS IC=10 mA , IB=0 VCEV=Rated Value, VBE(off)=1.5 V VCEV=Rated Value, VBE(off)=1.5V,Tc=100°C IC=0.5 A, VCE=2 V IC=1 A, VCE=2 V IC=200mA, VCE=10V IC=0.5A, IB=0.1A IC=1A, IB=0.2A IC=1.5A, IB=0.5A IC=0.5A, IB=0.1A IC=1A, IB=0.25 A IC=100mA, VCE=10 V, f=1MHz VCB=10V, IE=0, f=0.1MHz VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25μs, Duty Cycle≤1% IC=1A,Vclamp=300V, IB1=0.2A,VBE(off)=5V,TC=100°C MIN TYP MAX UNIT 300 1 5 8 40 5 25 9 40 0.8 1.8 V 3 1 1.2 V 4 10 21 MHz pF 0.05 0.1 0.5 1 24 0.4 0.7 μs μs μs μs 1.7 4 0.29 0.75 0.15 μs μs μs  CLASSIFICATION OF hFE1 RANK RANGE A 8 ~ 16 B 15 ~ 21 C 20 ~ 26 D 25 ~ 31 E 30 ~ 36 F 35 ~ 40 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 Ver.A MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR  APPLICATION INFORMATION Test Circuits Table 1.Test Conditions for Dynamic Performance Reverse Bias Safe Operating Area and Inductive Switching +5V VCC 0.001µF 1N4933 33 MJE210 L MR826* pw 5V DUTY CYCLE? 10% tr,tf? 10ns 68 33 1N4933 2N2222 1K 1K +5V RB IB 1N4933 0.02µF 270 NOTE PWand Vcc Adjusted for Desired Ic RB Adjusted for Desired IB1 1K T.U.T. 2N2905 MJE200 47 1/2W 100 -VBE(off) IC Vclamp *SELECTEDFOR? 1KV 5.1K VCE 51 Coil Data : GAP for 30 mH/2 A VCC=20V Ferroxcube core #6656 Lcoil=50mH Vclamp=300V Full Bobbin ( ~ 200 Turns) #20 Output Waveforms OUTPUT WAVEFORMS IC IC(pk) t1 VCE VCE or Vclamp TIME tf CLAMPED t tf t2 t t1 Adjusted to Obtain Ic t1= Lcoil(Icpk) Vcc t2= Lcoil(Icpk) Vclamp Test Equipment Scope-Tektronics 475 or Equivalent Circuit Values Test Waveforms Resistive Switching +125V Rc RB TUT SCOPE D1 -4.0V VCC=125V RC=125Ω D1=1N5820 or Equiv. RB=47Ω +10.3V 25μS 0 -8.5V tr,tf<10ns Duty Cycly=1.0% RB and Rc adjusted for desired IB and Ic IC (AMP) 0.5 1 TC (°C) 25 100 25 100 TSV (μs) 1.3 1.6 1.5 1.7 Table 2. Typical Inductive Switching Performance TRV (μs) 0.23 0.26 0.10 0.13 TFI (μs) 0.30 0.30 0.14 0.26 TTI (μs) 0.35 0.40 0.05.


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