WPB4001

Ordering number : ENA2212 WPB4001 N-Channel Power MOSFET 500V, 26A, 0.26Ω, TO-3P-3L http://onsemi.com Features ON-resistance RDS(on)=0.2Ω (typ.) Input capacitance Ciss=2250pF (typ.) 10V Drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Source to Drain Diode Forward Current (DC) Source to Drain Diode Forward Current (Pulse) VDSS VGSS ID IDP ISD ISDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 EAS IAV Note :*1 VDD=50V, L=5mH, IAV=14A (Fig.1) *2 L≤5mH, single pulse Conditions PW≤10μs, duty cycle≤1% PW≤10μs, duty cycle≤1% Tc=25°C TO-3P-3L Ratings 500 ±30 26 90 26 90 2.5 220 150 --55 to +150 543 14 Unit V V A A A A W W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Tur...