N-Channel IGBT
Ordering number : ENA2209
TIG074E8
N-Channel IGBT
400V, 150A, VCE(sat); 3.8V Single ECH8
http://onsemi.com
Features
•...
Description
Ordering number : ENA2209
TIG074E8
N-Channel IGBT
400V, 150A, VCE(sat); 3.8V Single ECH8
http://onsemi.com
Features
Low-saturation voltage Enhansment type Mounting Height 0.9mm, Mounting Area 8.12mm2 Halogen free compliance
Low voltage drive (2.5V)
Built-in Gate to Emitter protection diode dv / dt guarantee*
Application
Light-Controlling Flash Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
P-channel
Collector to Emitter Voltage Gate to Emitter Voltage (DC) Gate to Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector to Emitter dv / dt Channel Temperature
VCES VGES VGES ICP dv / dt
Tj
PW≤1ms
VGE=2.5V, CM=200μF Turn off Ic=150A, VCE≤320V, starting Tch=25°C
400 ±4 ±5
150 400 150
Storage Temperature
Tstg
-40 to +150
* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), will be 100% screen-detected in the circuit shown as Fig. 1.
Unit V V V A
V / μs °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector to Emitter Breakdown Voltage Collector to Emitter Cutoff Current Gate to Emitter Leakage Current Gate to Emitter Threshold Voltage Collector to Emitter Saturation Vol...
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