TF410

Ordering number : ENA2007A TF410 N-Channel JFET 40V, 50 to 130μA, 0.11mS, USFP http://onsemi.com Applications Impedance conversion, infrared sensor applications Features Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm) Small IGSS : max --500pA (VGSS= --20V, VDS=0V) Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VDSS VGDS IG ID PD Tj Storage Temperature Tstg Conditions Ratings 40 --40 10 1 30 150 --55 to +150 Unit V V mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. LOT No. LOT No. Package Dimensions unit : mm (typ) 7055-003 0.6 0.2 3 TF410-TL-H 0.11 0 to 0.02 0.8 0.1 1.0 0.1 1 0.175 2 0.15 0.27 0.05 1 2 1 : Source 2 : Drain 3 : Gate 3 USFP 0.05 Product & Package Information Package : USFP JEITA, JEDEC :- Minimum Packing Quantity : 10,000 pcs./reel Packing Type: TL Marking 3 BTL Electrical Connection 3 1 : Source 2 : Drain 3 : Gate 1 2 Top view 12 Semiconductor Components Industries, LLC, 2013 August, 2013 53012 TKIM/2...