TF408

Ordering number : ENA2008A TF408 N-Channel JFET 30V, 0.6 to 3.0mA, 5.0mS, USFP http://onsemi.com Applications Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features Ultrasmall package facilitates miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm) Small IGSS : max --1.0nA (VGS= --20V, VDS=0V) Small Ciss : typ 4pF (VDS= 10V, VGS=0V, f=1MHz) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VDSX VGDS IG ID PD Tj Storage Temperature Tstg Conditions Ratings 30 --30 10 10 30 150 --55 to +150 Unit V V mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. LOT No. LOT No. Package Dimensions unit : mm (typ) 7055-003 0.6 0.2 3 TF408-2-TL-H 0.11 TF408-3-TL-H 0 to 0.02 1.0 0.8 0.1 0.1 1 0.175 2 0.15 0.27 0.05 1 2 1 : Source 2 : Drain 3 : Gate 3 USFP 0.05 Product & Package Information Package : USFP JEITA, JEDEC :- Minimum Packing Quantity : 10,000 pcs./reel Packing Type: TL Marking 3 ATL Electrical Connection 3 1 : Source 2 : Drain 3 : Gate 1 2 Top view 12 Semiconductor Compone...