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TF256 Dataheets PDF



Part Number TF256
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel JFET
Datasheet TF256 DatasheetTF256 Datasheet (PDF)

Ordering number : ENA1616B TF256 N-Channel JFET 20V, 140 to 450μA, 1.7mS, USFP http://onsemi.com Features • High gain : GV=2.7dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz) • Ultrasmall package facilitates miniaturization in end products [1.0mm×0.6mm×0.27mm (max 0.3mm)] • Best suited for use in electret condenser microphone for audio equipments and telephones • Excellent transient characteristics • Adoption of FBET process • Halogen free compliance Specifications Absolute Maximum Ratin.

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Ordering number : ENA1616B TF256 N-Channel JFET 20V, 140 to 450μA, 1.7mS, USFP http://onsemi.com Features • High gain : GV=2.7dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz) • Ultrasmall package facilitates miniaturization in end products [1.0mm×0.6mm×0.27mm (max 0.3mm)] • Best suited for use in electret condenser microphone for audio equipments and telephones • Excellent transient characteristics • Adoption of FBET process • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VGDO IG ID PD Tj Storage Temperature Tstg Conditions Ratings --20 10 1 30 150 --55 to +150 Unit V mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. LOT No. LOT No. Package Dimensions unit : mm (typ) 7055-001 0.6 0.2 3 TF256-3-TL-H 0.11 TF256-4-TL-H TF256-5-TL-H 0 to 0.02 0.8 0.1 1.0 0.1 1 0.175 2 0.15 0.27 0.05 12 1 : Drain 2 : Source 3 : Gate 3 USFP 0.05 Product & Package Information • Package : USFP • JEITA, JEDEC :- • Minimum Packing Quantity : 10,000 pcs./reel Packing Type: TL Marking 3 NTL Electrical Connection 1 12 3 2 Semiconductor Components Industries, LLC, 2013 August, 2013 91212 TKIM/10511 TKIM TC-00002534/N2509GB TKIM TC-00002096 No. A1616-1/7 TF256 Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Symbol V(BR)GDO VGS(off) Conditions IG=--100μA VDS=2V, ID=1μA Drain Current IDSS VDS=2V, VGS=0V Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance | yfs | Ciss Crss VDS=2V, VGS=0V, f=1kHz VDS=2V, VGS=0V, f=1MHz [Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.] Voltage Gain GV VIN=10mV, f=1kHz Reduced Voltage Characteristic Frequency Characteristic Total Harmonic Distortion Output Noise Voltage ΔGVV ΔGvf THD VNO VIN=10mV, f=1kHz, VCC=2.0V → 1.5V f=1kHz to 110Hz VIN=30mV, f=1kHz VIN=0V, A curve Rank 3 4 5 3 4 5 3 4 5 3 4 5 Ratings min typ --20 --0.1 --0.35 100 140 240 0.75 1.7 3.1 1.0 1.0 2.0 3.0 --0.5 --0.6 --0.9 1.4 0.9 0.35 --105 max --1.0 180 280 450 --1.0 --1.3 --2.0 --1.0 --100 Unit V V μA mS pF pF dB dB dB % dB Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 2.2kΩ 5pF +33μF VCC=2.0V VCC=1.5V OSC VTVM V THD Ordering Information Device TF256-3-TL-H TF256-4-TL-H TF256-5-TL-H Package USFP USFP USFP Drain Current, ID -- μA 400 ID -- VDS 350 VGS=0V 300 250 --0.05V 200 150 100 50 0 0 --0.10V --0.15V --0.20V --0.25V --0.30V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Drain-to-Source Voltage, VDS -- V IT15213 Drain Current, ID -- μA Shipping 10,000pcs./reel 10,000pcs./re.


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