Document
Ordering number : ENA1616B
TF256
N-Channel JFET
20V, 140 to 450μA, 1.7mS, USFP
http://onsemi.com
Features
• High gain : GV=2.7dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz) • Ultrasmall package facilitates miniaturization in end products [1.0mm×0.6mm×0.27mm (max 0.3mm)] • Best suited for use in electret condenser microphone for audio equipments and telephones • Excellent transient characteristics • Adoption of FBET process • Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature
VGDO IG ID PD Tj
Storage Temperature
Tstg
Conditions
Ratings --20 10 1 30 150
--55 to +150
Unit V mA mA
mW °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
LOT No. LOT No.
Package Dimensions unit : mm (typ) 7055-001
0.6
0.2 3
TF256-3-TL-H 0.11 TF256-4-TL-H
TF256-5-TL-H
0 to 0.02
0.8 0.1
1.0
0.1
1 0.175
2 0.15
0.27 0.05
12
1 : Drain 2 : Source 3 : Gate
3 USFP
0.05
Product & Package Information
• Package
: USFP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 10,000 pcs./reel
Packing Type: TL
Marking
3
NTL
Electrical Connection
1
12
3
2
Semiconductor Components Industries, LLC, 2013 August, 2013
91212 TKIM/10511 TKIM TC-00002534/N2509GB TKIM TC-00002096 No. A1616-1/7
TF256
Electrical Characteristics at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage Cutoff Voltage
Symbol
V(BR)GDO VGS(off)
Conditions
IG=--100μA VDS=2V, ID=1μA
Drain Current
IDSS
VDS=2V, VGS=0V
Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance
| yfs | Ciss Crss
VDS=2V, VGS=0V, f=1kHz VDS=2V, VGS=0V, f=1MHz
[Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.]
Voltage Gain
GV VIN=10mV, f=1kHz
Reduced Voltage Characteristic Frequency Characteristic Total Harmonic Distortion Output Noise Voltage
ΔGVV ΔGvf THD VNO
VIN=10mV, f=1kHz, VCC=2.0V → 1.5V f=1kHz to 110Hz VIN=30mV, f=1kHz VIN=0V, A curve
Rank
3 4 5
3 4 5 3 4 5
3 4 5
Ratings
min typ
--20
--0.1
--0.35
100
140
240
0.75
1.7
3.1
1.0
1.0 2.0 3.0 --0.5 --0.6 --0.9
1.4 0.9 0.35 --105
max --1.0 180 280 450
--1.0 --1.3 --2.0 --1.0
--100
Unit V V μA mS pF pF
dB
dB dB % dB
Test Circuit
Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic
2.2kΩ
5pF +33μF
VCC=2.0V VCC=1.5V
OSC
VTVM V THD
Ordering Information
Device TF256-3-TL-H TF256-4-TL-H TF256-5-TL-H
Package USFP USFP USFP
Drain Current, ID -- μA
400 ID -- VDS
350 VGS=0V
300
250 --0.05V
200 150 100
50 0 0
--0.10V
--0.15V
--0.20V --0.25V
--0.30V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Drain-to-Source Voltage, VDS -- V IT15213
Drain Current, ID -- μA
Shipping 10,000pcs./reel 10,000pcs./re.