NCE N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE1520
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE1520 us...
Description
http://www.ncepower.com
Pb Free Product
NCE1520
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE1520 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 150V,ID =20A RDS(ON) <85mΩ @ VGS=10V
(Typ:70mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Schematic diagram
Application
● Boost converters ● LED backlighting ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE1520
NCE1520
TO-220-3L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
ID (100℃)
Drain Current-Continuous(TC=100℃)
IDM Pulsed Drain Current PD Maximum Power Dissipation
Derating factor
EAS Single pulse avalanche energy (Note 5)
TJ,TSTG
Operating Junction and Storage Temperature Range
Limit
150 ±20 20 14 40 75 0.5 200 -55 To 175
Unit
V V A A A W W/℃ mJ ℃
Wuxi NCE Power Co., Ltd
Page 1
v1.0
http://www.ncepower.com
Pb Free Product
NCE1520
Thermal Characteristic
RθJC
Thermal Resistance, Junction-to-Case (Note 2)
2.0 ℃/W
Electrical...
Similar Datasheet